Latest generation double-sided photovoltaic module equipped with N-Type Super Multi-Busbar cells which provide greater reflectance, with a consequent increase in output power. BLACK FRAME finish.
- NType TECHNOLOGY
N-type wafer and wafer doping process with phosphorus.
There is no loss in the recombination of boron and oxygen; the degradation induced by the light is significantly optimized and less than 0.8%.
Multivolt N-Type ensures that the cell surface has excellent passivation performance and the cell boundary efficiency reaches up to 28.7%
- SMBB CELL DESIGN
Super Multi-Busbar cells offer a lower resistance and higher busbar reflectance
- LOW DEGRADATION
Adopts N-Type TOP cell technology with less degradation and better temperature coefficient, significantly increasing the generation performance.
- EXCELLENT PERFORMANCE IN LOW LIGHT CONDITIONS
The advanced texturing technology of glass surface and solar cell enables excellent performance in low-light environments.
- HIGH RELIABILITY
Rigorous in-house testing in the CNAS-approved photovoltaic laboratory and TUV/VDE-certified
- HIGHLY REINFORCED DESIGN
Certified to withstand: 5400 Pa snow load
and 2400 Pa wind
- PID RESISTANT
Excellent PID resistance performance optimised by structural design
- DOUBLE-SIDED SURFACE ABLE TO GENERATE ENERGY ON BOTH SIDES OF THE MODULE
This feature allows to exploit the light not only on the upper side, but also on the lower side by reflection, thus increasing the production of electricity compared to a standard module.