Latest-generation photovoltaic module equipped with NType Multi-Busbar cells that provide higher reflectance, thus ensuring higher power output, BLACK FRAME finish.
- NType TECHNOLOGY
N-type wafer and wafer doping process with phosphorus.
There is no loss in the recombination of boron and oxygen; the degradation induced by the light is significantly optimized and less than 0.8%.
Multivolt N-Type ensures that the cell surface has excellent passivation performance and the cell boundary efficiency reaches up to 28.7%
- HALF-CELL MULTI-BUSBAR DESIGN
Half-cells bring lower resistance and higher power output
- LOW DEGRADATION
NType cells: less degradation and better temperature coefficient
- MORE POWER
Innovative 182 mm cell to guarantee 430 Wp module power
- EXCELLENT PERFORMANCE IN CONDITIONS WITH LOW LIGHT
Advanced technology maximises performance even in low light
- HIGH RELIABILITY
Rigorous in-house testing in the CNAS-approved photovoltaic laboratory and TUV/VDE-certified
- HIGHLY REINFORCED DESIGN
Certified to withstand: 5400 Pa snow load
and 2400 Pa wind
- PID RESISTANT
Excellent PID resistance performance optimised by structural design
